U W ED DB SiC Carbide Heating Element

U W ED DB SiC Carbide Heating Element Product Description The brief introduction of the silicon carbide heating element: 1) Non-metallic heating element, based on material of high quality green silicon carbide 2) Compared with metal, SiC electric heating element is characterized by...

U W ED DB SiC Carbide Heating Element

Product Description

The brief introduction of the silicon carbide heating element:

1) Non-metallic heating element, based on material of high quality green silicon carbide    

2) Compared with metal, SiC electric heating element is characterized by anti-oxidation, corrosion resistance, long service life, deformation, easy installation and maintenance.    

3) Widely used in multiple high temperature furnace(magnetic material, powder metallurgy, ceramic, glass, metallurgy and mechanical used) and other electric heating devices .

4)SiC electric heating element can be used in air atmosphere without any protect atmosphere.    

We make U, W, ED, DB, SCR, SC, UX type , also can be customizable    The diameter of heating element are 8mm, 10mm,12mm, 14mm, 16mm, 18mm, 20mm, 25mm,30mm,35mm, 40mm, 45mm, 50mm and so on.

 

Physical properties

Specific gravity2.6-2.8g/cm3Bend strength>300kg
Hardness>9 MOH'STensile strength>150kg/cm3
Porosity rate<30%Radiancy0.85

 

Technic data of  SiC electric heating elements 

OD( mm)HZ(mm)CZ(mm)OL(mm)Resistance (ohms)
8100-30060-200240-7002.1-8.6
12100-400100-350300-11000.8-5.8
14100-500150-350400-12000.7-5.6
16200-600200-350600-13000.7-4.4
18200-800200-400600-16000.7-5.8
20200-800250-600700-20000.6-6.0
25200-1200250-700700-26000.4-5.0
30300-2000250-800800-36000.4-4.0
35400-2000250-800900-36000.5-3.6
40500-2700250-8001000-43000.5-3.4
45500-3000250-7501000-45000.3-3.0
50600-2500300-7501200-40000.3-2.5
54600-2500300-7501200-40000.3-3.0

 

 Display of the silicon carbide heating element:

Silicon carbide heater


Chemical properties

High temperature oxidation resistance: Under high temperature oxidation atmosphere, a dense Shi Ying

( SiO 2 ) protective layer is formed on the surface of the element to prevent MoSi 2 from further oxidation. When the element temperature is greater than 1700 ℃ and the SiO 2  protective layer with melting point of 1710 ℃ melts, SiO 2 melts into droplets and loses its protective effect due to surface tension. When the element is used again in an oxidizing atmosphere, the SiO 2 protective layer is regenerated.

It must be pointed out that the components should not be used for a long time in the range of 400 -

900 ℃. Otherwise, the element will be pulverized due to the strong row oxidation at low temperature.

 

Sic Heating Elements Oxidation resistance

When using silicon carbide heating element to 800 ℃ begins to oxidize in air , the temperature reached 100-1200 ℃ , the heat generated on the surface portion of the protective film layer of silicon dioxide , crystallized cristobalite 1200 ℃ when , in 1400 ℃ , the protection film reaches a certain thickness , so that the rate of oxidation element becomes extremely slow , steady.If you continue to heat up to 1527 ℃ or more, destroy the protective film received a significant increase in the rate of oxidation , resulting in premature failure of components .Silicon carbide heating elements in the course of oxidation , although very slow,but still long run lead to increased resistance , a phenomenon called aging.


Resistance properties

The resistivity of MoSi2 heating elements increases rapidly with the increase of temperature. Under

normal operation, the resistance of the element generally does not change with the length of time. Therefore,

new and old components can be mixed.

 Resistance properties 


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